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Numonyx |
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block |
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Numonyx |
3V supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read Access time: 45, 55, 70 ns Programming time – 10 μs per byte/word typical 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks Program/Era |
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Numonyx |
64-Mbit 3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) Asynchronous random/page read – Page width: 4 words – Page access: 25 ns – Random access: 60, 70 ns Programming time – 10 μs per byte/word ty |
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Numonyx |
64M 3V Supply Flash Memory summary Supply voltage VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read Page Width: 4 Words Page Access: 25ns Random Access: 60ns, 70ns Programming time 10 s per Byte/Word typ |
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Numonyx |
4-Mbit Boot Block 3 V Supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns Programming time – 10 µs per byte/word typical 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main bloc |
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Numonyx |
128 Mbit 3V Supply Flash Memory Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30 ns – Random access: |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
3 V supply flash memory Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers Asynchronous Random/Page Read — Page size: 16 words or 32 bytes — Page access: 25 ns — Random access: 100ns (Fortified BGA); |
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Numonyx |
(M29Fxx0Fx) Top / Bottom Boot Block 5 V Supply Flash Memory Supply voltage – VCC = 5 V Access time: 55 ns Program / Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block |
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Numonyx |
8-Mbit Boot Block 3 V Supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access time: 55 ns, 70 ns Programming time – 10 µs per byte/word typical 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main bloc |
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Numonyx |
3V supply Flash memory Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read Access time: 45, 55, 70 ns Programming time – 10 μs per byte/word typical 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks Program/Era |
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Numonyx |
3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/e |
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Numonyx |
3V supply flash memory Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read Access times: 45, 70, 90 ns Programming time – 10 μs per byte/word typical 19 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 16 main blocks Program/e |
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Numonyx |
64M 3V Supply Flash Memory summary Supply voltage VCC = 2.7V to 3.6V for Program, Erase, Read VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read Page Width: 4 Words Page Access: 25ns Random Access: 60ns, 70ns Programming time 10 s per Byte/Word typ |
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