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M29W400DT |
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| Part Number | M29W400DT |
| Manufacturer | Numonyx |
| Description | ..... 6 2 Signal descriptions... . . . ... |
| Features |
Supply voltage – VCC = 2.7 V to 3.6 V for Program, Erase and Read Access time: 45, 55, 70 ns Programming time – 10 μs per byte/word typical 11 memory blocks – 1 boot block (top or bottom location) – 2 parameter and 8 main blocks Program/Erase controller – Embedded byte/word program algorithms Erase Suspend and Resume modes – Read and Program another block during Erase Suspend Unlock bypass program command – Faster production/batch programming Temporary block unprotection mode Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block Elec... |
| Document |
 M29W400DT Data Sheet
PDF 705.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M29W400DB |
ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory |
|
| 2 | M29W400DB |
Numonyx |
3V supply Flash memory |
|
| 3 | M29W400DT |
ST Microelectronics |
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory |
|
| 4 | M29W400B |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
|
| 5 | M29W400BB |
ST Microelectronics |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory |
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