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M29W128GH |
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| Part Number | M29W128GH |
| Manufacturer | Numonyx |
| Description | ..... 8 Signal descriptions... . . . . ... |
| Features |
Supply voltage – VCC = 2.7 to 3.6 V for program, erase, read – VCCQ = 1.65 to 3.6 V for I/O buffers – VPPH = 12 V for fast program (optional) Asynchronous random/page read – Page size: 8 words or 16 bytes – Page access: 25, 30 ns – Random access: 60 (only available upon customer request) or 70, 80 ns Fast program commands – 32 words (64-byte write buffer) Enhanced buffered program commands – 256 words Programming time – 16 μs per byte/word typical – Chip program time: 5 s with VPPH and 8 s without VPPH Memory organization – M29128GH/L: 128 main blocks, 128 Kbytes/64 Kwords each P... |
| Document |
 M29W128GH Data Sheet
PDF 2.02MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | M29W128GH |
Micron |
Parallel NOR Flash Embedded Memory |
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| 2 | M29W128GL |
Micron |
Parallel NOR Flash Embedded Memory |
|
| 3 | M29W128GL |
Numonyx |
128 Mbit 3V Supply Flash Memory |
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| 4 | M29W128FH |
Numonyx |
128 Mbit 3V Supply Flash Memory |
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| 5 | M29W128FL |
Numonyx |
128 Mbit 3V Supply Flash Memory |
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