| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NXP Semiconductors |
Power LDMOS transistor I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efficiency = 28.0 % N ACPR = −39 dBc I Easy power control I Integrate |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation di |
|
|
|
|
NXP Semiconductors |
WiMAX power LDMOS transistor I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing www.DataSheet4U.com common mode inductance • Designed for broadband operation (U |
|
|
|
|
NXP Semiconductors |
HF / VHF power LDMOS transistor and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent rugge |
|
|
|
|
NXP Semiconductors |
Power LDMOS transistor and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 = −37 dBc ACPR = −41 dBc Easy po |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
|
|
|
|
NXP Semiconductors |
HF / VHF power LDMOS transistor I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 50 mA: N Average output power = 20 W N Power gain = 27.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High effi |
|
|
|
|
NXP Semiconductors |
Power LDMOS transistor I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 20 dB N Efficiency = 27.5 % N ACPR = −40 dBc I Easy power control I Integrated E |
|
|
|
|
NXP Semiconductors |
WiMAX power LDMOS transistor I Typical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync and 6 traffic channels [Walsh codes 8 to 13]. PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and 2700 MH |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 dB N Drain efficiency = 46 % N Third order intermodulation distortion = −35 dBc I |
|
|
|
|
NXP Semiconductors |
Power LDMOS transistor and benefits Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR = −4 |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain = 21 dB Drain efficiency = 47 % Third order intermodulation distortion = −35 dBc |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
|
|
|
|
NXP Semiconductors |
UHF power LDMOS transistor and benefits Excellent ruggedness Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadb |
|
|
|
|
NXP Semiconductors |
HF / VHF power LDMOS transistor I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High |
|
|
|
|
NXP Semiconductors |
Power LDMOS transistor I Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 µs with δ of 20 %: N Output power = 1200 W N Power gain = 24 dB N Efficiency = 70 % I Easy power control I Integrated ESD protection I Exce |
|
|
|
|
NXP Semiconductors |
Power LDMOS transistor I Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 900 mA: N Average output power = 25 W N Power gain = 19 dB N Efficiency = 31 % N IMD3 = −37 dBc N ACPR = −40 dBc I Easy power contro |
|