BLF872 |
Part Number | BLF872 |
Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
Description | A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 250 W broadband over the full UHF band from 470 MHz to 860 MHz. The exc... |
Features |
s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efficiency ηD = 43 % x Third order intermodulation distortion IMD3 = −28 dBc s Typical DVB performance at 858 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Average output power PL(AV) = 70 W x Gain Gp = 15 dB x Drain efficiency ηD = 30 % x Third order intermodulation distortion IMD3 = −28 dBc (4.3 MHz from center frequency) s Advanced flange material for optim... |
Document |
BLF872 Data Sheet
PDF 179.58KB |
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