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BLF6G10L-40BRN |
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| Part Number | BLF6G10L-40BRN |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circu... |
| Features |
Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: Average output power (PL(AV)) = 2.5 W Power gain (Gp) = 23.0 dB Drain efficiency (ηD) = 15.0 % ACPR = −42.5 dBc Easy power control Integrated ESD protection Enhanced ruggedness High efficiency Excellent thermal stability Designed for broadband operation (728 MHz to 960 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) Integrated current sense
DataSheet.in
NXP Semicon... |
| Document |
 BLF6G10L-40BRN Data Sheet
PDF 327.49KB |
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
| 1 | BLF6G10LS-135R |
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| 2 | BLF6G10LS-200 |
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| 3 | BLF6G10LS-200R |
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| 4 | BLF6G10LS-200RN |
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| 5 | BLF6G10-200RN |
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