| No. | Partie # | Fabricant | Description | Fiche Technique |
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NXP |
6.2 A PNP low VCEsat (BISS) transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller requ |
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NXP |
N-Channel MOSFET a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate. APPLICATIONS • analog and/or digital switch • switch driver Marking code: BSS83 = % |
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NXP |
PNP medium power transistor • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe |
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NXP |
NPN transistor Ultra low collector-emitter saturation voltage VCEsat 4 A continuous collector current capability IC (DC) Up to 15 A peak current Very low collector-emitter saturation resistance High efficiency due to less heat generation 1.3 Applications |
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NXP |
2A NPN low VCEsat (BISS) transistor s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP |
2A PNP low VCEsat (BISS) transistor s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP |
40V low VCEsat NPN/PNP transistor • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPL |
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NXP |
PNP Transistor I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for |
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NXP |
PNP Transistor s s s s SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency leading to less heat generation 1.3 Applications s Major application segments: x Automotive 42 V power x Telecom infras |
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NXP |
5.7 A PNP low VCEsat (BISS) transistor and benefits Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller requ |
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NXP |
PNP transistor and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • • DC-to-DC conversion Supply line switc |
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NXP Semiconductors |
MOSFET and benefits Logic-level compatible Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Symbol |
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NXP |
NPN low VCEsat (BISS) transistor • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to less heat generation • Reduced printed-circuit board requirements • Cost effective alternative to MOSFETs in specific applic |
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NXP |
50 V low VCEsat NPN transistor • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generation APPLICATIONS • Medium power switching and muting • Linea |
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NXP |
80 V/ 4 A NPN low VCEsat (BISS) transistor • High hFE and low VCEsat at high current operation • High collector current capability: IC maximum 4 A • High efficiency leading to less heat generation. APPLICATIONS • Medium power peripheral drivers; e.g. fan, motor • Strobe flash units for DSC an |
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NXP |
PNP transistor • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 1 A continuous current • High current switching • Improved device reliability due to reduced heat generation. APPLICATIONS • Medium power switching and muting • Lin |
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NXP |
40 V low VCEsat PNP transistor • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. AP |
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NXP |
PNP transistor and benefits Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation AEC-Q101 qualified Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Application |
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NXP |
N-channel enhancement mode vertical D-MOS transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. • Low RDS(on) PINNING - SOT89 1 2 3 = = = source drain gate QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total po |
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NXP |
N-channel transistor • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. APPLICATIONS • Line current interruptor in telephone sets • Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS |
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