Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
PBSS5350D |
Click to view a larger image
| Part Number | PBSS5350D |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits Low collect... |
| Features |
Low collector-emitter saturation voltage VCEsat High current capability High efficiency due to less heat generation AEC-Q101 qualified Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications Supply line switching circuits Battery management applications DC-to-DC conversion 1.4 Quick reference data Table 1. Symbol VCEO IC ICM RCEsat Quick reference data Parameter collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Conditions open base IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ... |
| Document |
 PBSS5350D Data Sheet
PDF 160.55KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | PBSS5350D |
nexperia |
PNP transistor |
|
| 2 | PBSS5350S |
NXP |
50 V low VCEsat PNP transistor |
|
| 3 | PBSS5350SS |
NXP |
PNP/PNP low VCEsat (BISS) transistor |
|
| 4 | PBSS5350SS |
nexperia |
PNP/PNP transistor |
|
| 5 | PBSS5350T |
NXP |
50 V/ 3 A PNP low VCEsat (BISS) transistor |
|