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BSS83 |
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| Part Number | BSS83 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitanc... |
| Features |
a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.
APPLICATIONS
• analog and/or digital switch • switch driver Marking code: BSS83 = % M9 handbook, ha4lfpage 1 3 g 2 d b s PINNING 1 = substrate (b) 2 = source 3 = drain 4 = gate Note 1. Drain and source are interchangeable. Top view MAM389 Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Drain-source voltage Source-drain voltage Drain-substrate voltage Source-substrate voltage Drain current (DC) Total power dissipat... |
| Document |
 BSS83 Data Sheet
PDF 228.01KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSS80 |
Siemens Semiconductor Group |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
|
| 2 | BSS80 |
Infineon Technologies |
PNP Transistors |
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| 3 | BSS80 |
Kexin |
PNP Silicon Switching Transistors |
|
| 4 | BSS806N |
Infineon Technologies |
Small-Signal-Transistor |
|
| 5 | BSS806NE |
Infineon |
Small-Signal-Transistor |
|