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NXP |
PHT6N06T s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning i |
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NXP |
PowerMOS transistor Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction t |
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NXP |
PowerMOS transistor ation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 60 60 30 41 29 164 125 175 175 UNIT V V V A A A W ˚C ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Therm |
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NXP |
TrenchMOS transistor Standard level FET s Low on-state resistance s Fast switching s Low QGD s Surface mounting package. 1.3 Applications s DC to DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.3 W s ID ≤ 5.5 A s RDSon ≤ 150 mΩ 2. Pinning i |
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NXP |
Dual TrenchMOS logic level FET s s s s Low on-state resistance Logic level compatible Dual device Surface mount package. 3. Applications s s s s DC-to-DC converters Notebook computers Portable appliances Battery chargers. 4. Pinning information Table 1: Pin 1 2 3 4 5, 6 7, 8 Pin |
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NXP |
TrenchMOS transistor Logic level FET • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Surface mounting package PHT6N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 5.9 A g s RDS(ON) ≤ 30 |
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NXP |
TrenchMOS transistor Standard level FET very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching applications. PHT6N03T QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER |
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NXP |
TrenchMOS transistor Logic level FET very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in DC-DC converters and general purpose switching applications. PHT6N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-so |
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NXP |
N-channel TrenchMOS logic level FET I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinni |
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NXP |
N-channel TrenchMOS logic level FET I Logic level compatible I Low gate charge 1.3 Applications I DC-to-DC converters I Switched-mode power supplies 1.4 Quick reference data I VDS ≤ 30 V I RDSon ≤ 17 mΩ I ID ≤ 43.4 A I Ptot ≤ 57.6 W 2. Pinning information Table 1. Pin 1 2 3 mb Pinni |
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NXP Semiconductors |
TrenchMOS standard level FET s Fast Switching s TrenchMOSTM technology. 1.3 Applications s DC-to-DC converters s General purpose switch. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 13.1 A s RDSon ≤ 100 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning |
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NXP Semiconductors |
N-channel TrenchMOS logic level FET s Logic level threshold s Fast switching. 1.3 Applications s DC-to-DC converters s General purpose switching. 1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 32.6 W s ID ≤ 16 A s RDSon ≤ 67 mΩ. 2. Pinning information Table 1: Pin 1 2 3 mb Pinning - |
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