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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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International Rectifier |
N-Channel Transistor Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver |
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NTE |
Programmable Unijunction Transistor D Programmable − RBB, , IV, and IP D Low On−State Voltage − 1.5V Maximum @ IF = 50mA D Low Gate−to−Anode Leakage Current − 10nA Maximum D High Peak Output Voltage − 11V Typical D Low Offset Voltage − 0.35V Typical (RG = 10kW) Absolute Maximum Ratin |
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Intersil Corporation |
N-Channel Power MOSFET • 8A, 100V • rDS(ON) = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796 |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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International Rectifier |
P-CHANNEL TRANSISTORS Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver |
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International Rectifier |
POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A) s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TST |
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InterFET Corporation |
N-Channel JFET • InterFET N0132L Geometry • Low Noise: 1.0 nV/√Hz Typical • High Gain: 15mS Minimum • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Low-Noise, High Gain Amplifiers • Low-Noise Preamplifiers Description The |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Intersil Corporation |
32A/ 600V N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device ha |
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Intersil Corporation |
N-Channel IGBT • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transist |
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Intersil Corporation |
N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and b |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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International Rectifier |
POWER MOSFET N-CHANNEL n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous D |
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International Rectifier |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS ! ! ! ! ! ! ! ! Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VG |
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International Rectifier |
HEXFET Power MOSFET ristics Symbol EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. – – – – – – – – – Max. 380 22 37 Units mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, |
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Pan Jit International |
PJF2N60 • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In com |
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Pan Jit International |
650V N-CHANNEL MOSFET • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In |
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NTE |
Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Not |
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