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2N6028 |
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| Part Number | 2N6028 |
| Manufacturer | NTE |
| Description | Designed to enable the engineer to “program” unijunction characteristics such as RBB, , IV, and IP by merely selecting two resistor values. Applications include thyristor−trigger, oscillator, pulse ... |
| Features |
D Programmable − RBB, , IV, and IP D Low On−State Voltage − 1.5V Maximum @ IF = 50mA D Low Gate−to−Anode Leakage Current − 10nA Maximum D High Peak Output Voltage − 11V Typical D Low Offset Voltage − 0.35V Typical (RG = 10kW)
Absolute Maximum Ratings: (TJ = +25C, Note 1 unless otherwise specified) Power Dissipation, PF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0mW/C DC Forward Anode Cur... |
| Document |
 2N6028 Data Sheet
PDF 63.05KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6027 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 2 | 2N6027 |
UTC |
PROGRAMMABLE UNIJUNCTION TRANSISTOR |
|
| 3 | 2N6027 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
|
| 4 | 2N6028 |
ON Semiconductor |
Programmable Unijunction Transistor |
|
| 5 | 2N6028 |
Central Semiconductor |
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
|