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HGTG32N60E2 |
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| Part Number | HGTG32N60E2 |
| Manufacturer | Intersil Corporation |
| Description | The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio... |
| Features |
• 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, s... |
| Document |
 HGTG32N60E2 Data Sheet
PDF 33.30KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | HGTG30N120CN |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | HGTG30N120D2 |
Intersil Corporation |
N-Channel IGBT |
|
| 3 | HGTG30N60 |
Fairchild Semiconductor |
600V Planar IGBT Chip |
|
| 4 | HGTG30N60A4 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 5 | HGTG30N60A4 |
Intersil Corporation |
N-Channel IGBT |
|