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NEC |
NP88N04 • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is |
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NEC |
MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, I |
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NEC |
MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, I |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2600 pF TYP. • Built-in Gate Protection Diode 5 NP80N03ELE NP80N0 |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.6 mΩ MAX. (VGS = 10 V, ID = 41 A) • Low Ciss: Ciss = 3500 pF TYP. • Built-in gate protection diode 5 NP82N055KHE (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Dra |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2600 pF TYP. • Built-in Gate Protection Diode 5 NP80N03ELE NP80N0 |
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NEC |
SWITCHING N-CHANNEL POWER MOS FET • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2600 pF TYP. • Built-in Gate Protection Diode 5 NP80N03ELE NP80N0 |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is |
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NEC Electronics |
Switching N-Channel Power MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode NP80N055ELE (TO- |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 8200 pF TYP. (TO-262) (TO-263) The information in this document is subject to change without notice. |
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NEC |
N-CHANNEL POWER MOS FET • Non logic level • Super low on-state resistance RDS(on) = 6.0 mΩ MAX. (VGS = 10 V, ID = 41 A) • High current rating ID(DC) = ±82 A • Low input capacitance Ciss = 6400 pF TYP. • Designed for automotive application and AEC-Q101 qualified ABSOLUTE MA |
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NEC |
MOSFET • Logic level • Built-in gate protection diode • Super low on-state resistance - NP80N06MLG, NP80N06NLG RDS(on)1 = 8.6 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13.3 mΩ MAX. (VGS = 4.5 V, ID = 35 A) - NP80N06PLG RDS(on)1 = 8.3 mΩ MAX. (VGS = 10 V, I |
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NEC Electronics |
Switching N-Channel Power MOS FET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 m Ω MAX. (VGS = 10 V, I D = 40 A) RDS(on)2 = 13 m Ω MAX. (VGS = 5 V, I D = 40 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode NP80N055ELE (TO- |
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NEC |
NP80N055 • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2900 pF TYP. • Built-in gate protection diode ORDERING INFORMATION |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 5000 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel Temperature 175 degree rated • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2600 pF |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 8.0 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2200 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel Temperature 175 degree rated www.DataSheet4U.com • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low in |
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NEC |
SWITCHING N-CHANNEL POWER MOSFET • Channel Temperature 175 degree rated www.DataSheet4U.com • Super Low on-state Resistance RDS(on)1 = 7.0 mΩ MAX. (VGS = 10 V, ID = 40 A) (TO-262) RDS(on)3 = 11 mΩ MAX. (VGS = 4.5 V, ID = 40 A) RDS(on)2 = 9.0 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low in |
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