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88N04 |
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| Part Number | 88N04 |
| Manufacturer | NEC |
| Description |
These products are N-channel MOS Field Effect Transistors designed for high current switching applications. |
| Features |
• Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 4.3 mΩ MAX. (VGS = 10 V, ID = 44 A) • Low input capacitance Ciss = 7300 pF TYP. • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14236EJ8V0DS00 (8th edition) Date Published October 2007 NS ... |
| Document |
 88N04 Data Sheet
PDF 284.06KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 88N14 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 2 | 88N18 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 3 | 88N20 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 4 | 88N21 |
Unisonic Technologies |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|
| 5 | 88N22 |
UTC |
BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR |
|