NP82P04PLF |
Part Number | NP82P04PLF |
Manufacturer | NEC |
Description |
The NP82P04PLF is P-channel MOS Field Effect Transistor designed for high current switching applications. |
Features |
• Super low on-state resistance RDS(on)1 = 8 mΩ MAX. (VGS = −10 V, ID = −41 A) RDS(on)2 = 12 mΩ MAX. (VGS = −4.5 V, ID = −41 A) • Low input capacitance Ciss = 5000 pF TYP. • Built-in gate protection diode (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg −40 m20 m82 m246 150 1.8 175 −55 to +175 46 212 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage... |
Document |
NP82P04PLF Data Sheet
PDF 202.31KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP82N03PUG |
Renesas |
N-CHANNEL POWER MOS FET | |
2 | NP82N04MDG |
Renesas |
N-CHANNEL POWER MOS FET | |
3 | NP82N04MLG |
Renesas |
N-Channel MOSFET | |
4 | NP82N04NDG |
Renesas |
N-CHANNEL POWER MOS FET | |
5 | NP82N04NLG |
Renesas |
N-Channel MOSFET |