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NEC |
MOS FIELD EFFECT TRANSISTOR • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP. (TO-252) |
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NEC |
Display Module |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5100 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = |
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NEC |
MOSFET • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = |
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NEC |
MOS FIELD EFFECT TRANSISTOR • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 28 A) • Low input capacitance Ciss = 3400 pF TYP. (VDS = 25 V) (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VG |
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