| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
MTD20N03HL nch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non –Repetitive (tp ≤ 10 ms |
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Motorola |
TMOS4 POWER FET |
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Motorola |
SINGLE TMOS POWER MOSFET 30 VOLTS RDS inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Characterized Over a Wide Range of Power Ratings • Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
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Motorola |
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM n Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add |
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Motorola |
(MTD4P05 / MTD4P06) POWER FIELD EFFECT TRANSISTOR |
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Motorola |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK |
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Motorola |
(MTD5N05 / MTD5N06) Power Field Effect Transistors |
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Motorola |
Power MOSFET above 25°C Total Power Dissipation @ TA = 25°C (1) Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD PD PD TJ, Tstg CASE 369A –13, Style 2 DPAK (TO –252) MAXIMUM RATINGS Value 150 150 ± 20 ± 40 6. |
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Motorola |
Power MOSFET 2500 Unit Tape & Reel, Add –T4 Suffix to Part Number ™ Data Sheet MTD6N20E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM ® D CASE 369A –13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) |
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Motorola |
TMOS POWER FET 3 AMPERES 250 VOLTS RDS vailable in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Non |
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Motorola |
TMOS POWER FET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and V |
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Motorola |
TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add –T4 Suffix to Part Number • Replaces MTD1N40E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) |
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Motorola |
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM vailable in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Replaces the MTD2955 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Ga |
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Motorola |
TMOS POWER FET ackage Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Volta |
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Motorola |
Power MOSFET SS and VDS(on) Specified at Elevated Temperature • Surface Mount Package Available in 16 mm, 13 –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number • Available in Insertion Mount, Add –1 or 1 to Part Number MAXIMUM RATINGS (TC = 25°C unless othe |
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Motorola |
(MTD4P05 / MTD4P06) POWER FIELD EFFECT TRANSISTOR |
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Motorola |
TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM |
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Motorola |
POWER FIELD EFFECT TRANSISTOR |
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Motorola |
(MTD5N05 / MTD5N06) Power Field Effect Transistors |
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