MTD2N50E Motorola TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM Datasheet, en stock, prix

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MTD2N50E

Motorola
MTD2N50E
MTD2N50E MTD2N50E
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Part Number MTD2N50E
Manufacturer Motorola
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2N50E Motorola Preferred Device...
Features n Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13
  –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Replaces MTD2N50 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total...

Document Datasheet MTD2N50E Data Sheet
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