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MTD6N20E |
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| Part Number | MTD6N20E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA www.DataSheet4U.com Order this document by MTD6N20E/D Designer's TMOS E-FET .™ Power Field Effect Transistor DPAK for Surface Mount N–Channel Enhancement–Mod... |
| Features |
2500 Unit Tape & Reel, Add –T4 Suffix to Part Number ™ Data Sheet MTD6N20E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM ® D CASE 369A –13, Style 2 DPAK G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –to –Source Voltage Drain –to –Gate Voltage (RGS = 1.0 MΩ) Gate –to –Source Voltage — Continuous — Non –repetitive (tp ≤ 10 ms) Drain Current — Continuous — Continuous @ 100°C — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and St... |
| Document |
 MTD6N20E Data Sheet
PDF 210.13KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTD6N20E |
ON Semiconductor |
Power MOSFET |
|
| 2 | MTD6N10 |
Motorola |
TMOS POWER FET 6 AMPERES RDS(on) = 0.25 OHM 80 and 100 VOLTS |
|
| 3 | MTD6N10E |
Motorola |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
|
| 4 | MTD6N15 |
ON Semiconductor |
Power Field Effect Transistor |
|
| 5 | MTD6N15 |
Motorola |
Power MOSFET |
|