No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
DUAL MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage |
|
|
|
Motorola |
Dual MOSFET drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Ultra Low RDS(on) Provides Higher Efficiency and Extends Ba |
|
|
|
Motorola |
DUAL BIPOLAR POWER TRANSISTOR NPN SILICON 30 VOLTS 3 AMPERES ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a low reverse recovery time. MiniMOS devices are designed for use in low voltage |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET High Speed, With Soft Recovery IDSS Specified at Elevated Temperature Mounting Information for SO –8 Package Provided DUAL TMOS POWER MOSFET 30 VOLTS RDS(on) = 100 mW ™ D CASE 751 –05, Style 11 SO –8 G S Source –1 Gate –1 Source –2 Gate –2 1 2 3 4 8 7 |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. EZFET devices are designed for use in low volt |
|
|
|
Motorola |
Dual MOSFET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors G S MMDF2N06V DUAL TMOS MOSFET 3.3 AMPERES 60 VOLTS RDS(on) = 0.115 OHM TM D CA |
|
|
|
Motorola |
Dual MOSFET of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors G S MMDF2N06VL DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM TM D |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET d tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Zener Protected Gates Provide Electrostatic Discharg |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|
|
|
Motorola |
Dual MOSFET ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain –to –source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low vo |
|