MMDF3N02HD |
Part Number | MMDF3N02HD |
Manufacturer | Motorola |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3N02HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMDF3N02HD Motorola Preferred Device TMOS Dual N-Channel Fi... |
Features |
lanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • • • • • • • • DUAL TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM ™ D CASE 751 –05, Style 11 SO –8 G S Source –1 Gate –1 Source –2 Gate –2 Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life Logic Level Gate Drive — Can Be Driven by Logic ICs Miniature SO –8 Surface Mount Package — Saves Board Space Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery ... |
Document |
MMDF3N02HD Data Sheet
PDF 297.98KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | MMDF3N02HD |
ON Semiconductor |
Power MOSFET | |
2 | MMDF3N03HD |
Motorola |
Dual MOSFET | |
3 | MMDF3N03HD |
ON |
Power MOSFET | |
4 | MMDF3N04HD |
Motorola |
Dual MOSFET | |
5 | MMDF3N04HD |
ON Semiconductor |
Power MOSFET |