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MMDF2N06VL |
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| Part Number | MMDF2N06VL |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF2N06VL/D Product Preview TMOS V™ SO-8 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed... |
| Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors G S MMDF2N06VL DUAL TMOS MOSFET 2.5 AMPERES 60 VOLTS RDS(on) = 0.130 OHM TM D CASE 751 –05, Style 11 SO –8 Source –1 1 2 3 4 8 7 6 5 Drain –1 Drain –1 Drain –2 Drain –2 Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET • Miniature SO –8 Surface Mount Package – Saves Board Space • Mounting Inf... |
| Document |
 MMDF2N06VL Data Sheet
PDF 114.96KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MMDF2N06V |
Motorola |
Dual MOSFET |
|
| 2 | MMDF2N02E |
Motorola |
Dual MOSFET |
|
| 3 | MMDF2N02E |
ON Semiconductor |
Power MOSFET |
|
| 4 | MMDF2N05ZR2 |
Motorola |
Dual MOSFET |
|
| 5 | MMDF2C01HD |
Motorola |
Dual MOSFET |
|