| No. | Partie # | Fabricant | Description | Fiche Technique |
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Mitsubishi |
FM MOBILE RADIO |
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Mitsubishi |
FM MOBILE RADIO olerance Parameter Test conditions Limits Min 430 27 40 Max 450 Unit MHz W % dBc dBc VCC=12.5V, Pin=200mW, ZG=ZL=50Ω -30 -30 2.8 No degradation or destroy VCC=15.2V, PO=7W (Pin : Control), ZG=50Ω Load VSWR = 20:1 (All phase) Note. Above parameter |
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Mitsubishi |
FM MOBILE RADIO |
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Mitsubishi |
FM MOBILE RADIO olerance Parameter Test conditions Limits Min 300 20 40 Max 308 Unit MHz W % dBc dBc - Pin=300mW, VCC1, 2, 3=12.5V, ZG=ZL=50Ω -30 -30 2.8 No degradation or destroy VCC1, 2, 3=15.2V, PO=20W (Pin:Controlled), ZG=50Ω, Load VSWR=20:1 (All phase) Note |
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Mitsubishi |
SILICON MOS FET POWER AMPLIFIER itions Limits Min 820 6 35 Max 851 Unit MHz W % dBc - VDD=12.5V, VGG=5V, Pin=1mW ZG=ZL=50Ω, VDD=10-16V, Load VSWR<4:1 VDD=15.2V, Pin=1mW, PO=6W (VGG adjust), ZL=20:1 -30 4 No parasitic oscillation No degradation or destroy Note. Above parameters, |
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Mitsubishi |
FM MOBILE RADIO 175 Unit MHz W % dBc dBc - VCC1=VCC2=12.5V, Pin=300mW, ZG=ZL=50Ω VCC1=VCC2=15.2V, PO=60W (Pin:controlled), ZG=50Ω, Load VSWR=8.8:1 (All phase) -30 -30 3 No degradation or destroy Note. Above parameters, ratings, limits and test conditions are sub |
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Mitsubishi |
fm mobile radio Parameter Test conditions Limits Min 440 50 35 Max 470 Unit MHz W % dBc dBc - VCC=12.5V, Pin=400mW, ZG=ZL=50Ω -30 -30 3 No degradation or destroy VCC=15.2V, PO=50W (Pin:controlled) ZG=50Ω, Load VSWR=8:1 (All phase) Note. Above parameters, rating |
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Mitsubishi |
FM MOBILE RADIO |
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Mitsubishi |
FM PORTABLE RADIO |
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Mitsubishi |
SILICON MOS FET POWER AMPLIFIER r Test conditions Limits Min 330 2 40 Max 360 Unit MHz W % dBc - VDD=6V, VGG=3.5V, Pin=20mW ZG=50Ω, VDD=4-8V, Load VSWR<4:1 VDD=9V, Pin=20mW, PO=2W (VGG adjust), ZL=20:1 -25 4 No parasitic oscillation No degradation or destroy Note. Above paramete |
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Mitsubishi Electric Semiconductor |
1.55 um DFB-LD MODULE Input impedance is 25W Multi qu antum wells (MQW) DFB Laser Diode module Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod |
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Mitsubishi Electric Semiconductor |
1.55 um DFB-LD MODULE Multi qu antum wells (MQW) DFB Laser Diode module Input impedance is 25W Emission wavelength is in 1.55mm band Polarization maintaining optical fiber pig-tail Built-in optical isolator Built-in thermal electric cooler Butterfly package With photodiod |
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Mitsubishi |
Silicon MOS FET Power Amplifier W deg. C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIM |
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Mitsubishi |
Silicon MOS FET Power Amplifier C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIMITS MIN |
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Mitsubishi |
FM MOBILE RADIO |
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Mitsubishi |
fm mobile radio Parameter Test conditions Limits Min 440 50 35 Max 470 Unit MHz W % dBc dBc - VCC=12.5V, Pin=400mW, ZG=ZL=50Ω -30 -30 3 No degradation or destroy VCC=15.2V, PO=50W (Pin:controlled) ZG=50Ω, Load VSWR=8:1 (All phase) Note. Above parameters, rating |
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Mitsubishi |
FM MOBILE RADIO |
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Mitsubishi |
FM MOBILE RADIO Parameter Test conditions Limits Min 430 50 35 Max 450 Unit MHz W % dBc dBc - VCC=12.5V, Pin=400mW, ZG=ZL=50Ω -30 -30 3 No degradation or destroy VCC=15.2V, PO=50W (Pin:controlled) ZG=50Ω, Load VSWR=8:1 (All phase) Note. Above parameters, rating |
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Mitsubishi |
FM PORTABLE RADIO |
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Mitsubishi |
SILICON MOS FET POWER AMPLIFIER Test conditions Limits Min 290 2 40 Max 330 Unit MHz W % dBc - VDD=6V, VGG=3.5V, Pin=20mW ZG=50Ω, VDD=4-9V, Load VSWR<4:1 VDD=9V, Pin=20mW, PO=3W (VGG adjust), ZL=20:1 -20 4 No parasitic oscillation No degradation or destroy Note. Above parameters |
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