M68701H Mitsubishi Silicon MOS FET Power Amplifier Datasheet, en stock, prix

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M68701H

Mitsubishi
M68701H
M68701H M68701H
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Part Number M68701H
Manufacturer Mitsubishi
Description ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELETROSTATIC SENSITIVE DEVICES MITSUBISHI RF POWER MODULE M68701H Silicon MOS FET Power Amplifier, 890-960MHz 6W FM /Digital Mobile D im e n s i o n s i n ...
Features W deg. C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR LOAD VSWR TOLERANCE TEST CONDITIONS LIMITS MIN MAX 890 960 6 35 -30 4 No degradation or destroy UNIT MHz W % dBc - VDD=12.5V,VGG=5V,Pin=1mW VDD=12.5V, Pout=6W (VGG adjust) Pin=1mW VDD=15.2V,Pin=1mW,Po=6W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE . Keep safety first in your circuit designs! Mitsubishi Electric Corpora...

Document Datasheet M68701H Data Sheet
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