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Features
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itions Limits Min 820 6 35 Max 851 Unit MHz W % dBc -
VDD=12.5V, VGG=5V, Pin=1mW ZG=ZL=50Ω, VDD=10-16V, Load VSWR<4:1 VDD=15.2V, Pin=1mW, PO=6W (VGG adjust), ZL=20:1
-30 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. ´97
MITSUBISHI RF POWER MODULE
M68701
SILICON MOS FET POWER AMPLIFIER, 820-851MHz, 6W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 ρin ηT PO 100 90 80 VDD=12.5V 70 VGG=5V 60 Pin=1mW ZG=ZL=50Ω 50 40 30 20 10 ...
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M68701 Data Sheet
