| No. | Partie # | Fabricant | Description | Fiche Technique |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦9.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
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Matsuki |
N-Channel 80-V (D-S) MOSFET ● RDS(ON)≦4.9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME80N08 (Pb-free |
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Matsuki |
P-Channel Enhancement Mode MOSFET ● RDS(ON)≦7.2mΩ@VGS=-10V ● RDS(ON)≦12mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦10.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
N-Channel 80-V (D-S) MOSFET ● RDS(ON)≦4.9mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch e Ordering Information: ME80N08 (Pb-free |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CO |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch PIN CONFIGURATION (TO-220F) Top View * |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CO |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch PIN CONFIGURATION (TO-220F) Top View * |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦8mΩ@VGS=-10V ● RDS(ON)≦11mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LC |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦8mΩ@VGS=-10V ● RDS(ON)≦11mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LC |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-26 |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter (TO-26 |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦10.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Pow |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management i |
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Matsuki |
N-Channel MOSFET ● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * The Ordering Information: ME80N75F (Pb- |
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Matsuki |
P-Channel MOSFET ● RDS(ON)≦5.2mΩ@VGS=-10V ● RDS(ON)≦9.5mΩ@VGS=-4V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powe |
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Matsuki |
Dual N-Channel MOSFET ● RDS(ON)≦22mΩ@VGS=4.5V ● RDS(ON)≦23mΩ@VGS=4.0V ● RDS(ON)≦26mΩ@VGS=3.0V ● RDS(ON)≦29mΩ@VGS=2.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management i |
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