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ME80N08AF-G |
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| Part Number | ME80N08AF-G |
| Manufacturer | Matsuki |
| Description | The ME80N08AF is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to m... |
| Features |
● RDS(ON)≦5mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (TO-220F) Top View * The Ordering Information: ME80N08A F(Pb-free) ME80N08AF-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Symbol Maximum Ratings Unit Drain-Source Voltage VDS 80 V Gate-Source Voltage Continuous Drain Current* Pulsed Drain Currenta Power Dissipation Tc=25℃ TC=... |
| Document |
 ME80N08AF-G Data Sheet
PDF 918.48KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ME80N08AF |
Matsuki |
N-Channel MOSFET |
|
| 2 | ME80N08A |
Matsuki |
N-Channel MOSFET |
|
| 3 | ME80N08A-G |
Matsuki |
N-Channel MOSFET |
|
| 4 | ME80N08AH |
Matsuki |
N-Channel MOSFET |
|
| 5 | ME80N08AH-G |
Matsuki |
N-Channel MOSFET |
|