ME80N75F |
Part Number | ME80N75F |
Manufacturer | Matsuki |
Description | The ME80N75F is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to mi... |
Features |
● RDS(ON)≦10mΩ@VGS=10V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management ● DC/DC Converter ● Load Switch * The Ordering Information: ME80N75F (Pb-free) ME80N75F-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Single pulse Avalanche Current L=0.3mH Single pulse Avalanche Energy L=0.3mH Maximum Power Dissipation TC=25℃ TC=70℃ TC=25℃ TC=70℃... |
Document |
ME80N75F Data Sheet
PDF 0.98MB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | ME80N75AF |
Matsuki |
N-Channel MOSFET | |
2 | ME80N75AF-G |
Matsuki |
N-Channel MOSFET | |
3 | ME80N75AT |
Matsuki |
N-Channel MOSFET | |
4 | ME80N75AT-G |
Matsuki |
N-Channel MOSFET | |
5 | ME80N75F-G |
Matsuki |
N-Channel MOSFET |