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Toshiba Semiconductor |
SM3JZ47 3−10H1A Note 1: di / dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-13 SM3GZ47,SM3JZ47 www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Ga |
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Alliance Semiconductor Corporation |
Peak Reducing EMI Solution • Generates an EMI optimized clocking • • • • • • signal at the output. Selectable output frequency range. Single 1.25% or 2.4% down spread output. Integrated loop filter components. Operates with a 3.3V supply. Low-power CMOS design. Available in 8- |
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Alliance Semiconductor Corporation |
Low Frequency EMI Reduction FCC approved method of EMI attenuation. Generates a low EMI spread spectrum of the input clock frequency. Optimized for input frequency range between 35MHz – 55MHz. Internal loop filter minimizes external components and board space. Frequency Deviati |
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ST Microelectronics |
iNEMO inertial module:3D accelerometer and 3D gyroscope ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Analog supply voltage: 2.4 V to 3.6 V Digital supply voltage IOs: 1.8 V Low power mode Power-down mode 3 independent acceleration channels and 3 angular rate channels ±2 g/±4 g/±8 g/±16 g dynamically selectable full scale ±250/±5 |
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Alliance Semiconductor Corporation |
Low Power EMI Reduction IC FCC approved method of EMI attenuation. Provides up to 15dB EMI reduction. Generates a 4X REF EMI spread output Spectrum clock of the input frequency. Optimized for input frequency range from 10 to 20MHz. External Loop Filter for configur |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET tc.) are within the JEITA TOSHIBA ― 2-1L1B absolute maximum ratings. Please design the appropriate reliability upon reviewing the Weight: 1.5 mg (typ.) Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Meth |
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ON Semiconductor |
Low Power Peak EMI Reducing Solution • Generates an EMI Optimized Clock Signal at the Output • Integrated Loop Filter Components • Operates with a 3.3 V / 2.5 V Supply • Operating Current less than 4 mA • Low Power CMOS Design • Input Frequency Range: 13 MHz to 30 MHz for 2.5 V 13 MHz t |
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Toshiba Semiconductor |
BI−DIRECTIONAL TRIODE THYRISTOR dt test condition VDRM = 0.5×Rated ITM ≤ 4.5A tgw ≥ 10µs tgr ≤ 250ns igp = IGT×2.0 1 2001-07-13 SM3GZ47,SM3JZ47 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current I Gate Trigger Voltage II III IV I Gate Trigge |
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Taiwan Semiconductor Company |
20V P-Channel MOSFET ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. TSM3433CX6 RF Package SOT-26 Packing 3Kpcs / 7” Reel P-Channel MOSFET A |
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Taiwan Semiconductor Company |
20V N-Channel MOSFET ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. Package Packing TSM3446CX6 RF SOT-26 3Kpcs / 7” Reel TSM3446CX6 RFG SOT-26 3Kpcs / |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET are within the absolute maximum ratings. Weight: 6.0 mg (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliabil |
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STMicroelectronics |
(ESMxxxx) Power Bipolar |
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Sharp Electrionic Components |
4-Bit Single-Chip Microcomputer |
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STMicroelectronics |
3D accelerometer and 3D gyroscope • 3-axis accelerometer with selectable full scale: ±2/±4/±8/±16 g • 3-axis gyroscope with selectable full scale: ±125/±250/±500/±1000/±2000 dps • Analog supply voltage: 1.71 V to 3.6 V • SPI & I²C serial interface with main processor data synchroniza |
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Toshiba Semiconductor |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type als. 1 2003-03-27 SSM3K02F Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacit |
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Toshiba Semiconductor |
Silicon N-Channel MOSFET in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test |
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Taiwan Semiconductor Company |
Straight 1-Row BergStik II Headers ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● Dc-DC Converters and Motors Drivers Ordering Information Block Diagram Part No. TSM35N03CP RO Package TO-252 Packing 2.5Kpcs / |
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Alliance Semiconductor Corporation |
Peak EMI Reducing Solution Generates an EMI optimized clock signal at output. Input frequency: 25 MHz. Frequency outputs: o o USB Clock (48 MHz unmodulated) 50 MHz (modulated), ±1% centre spread shielding that are required to pass EMI regulations. The ASM3P2853A modulates the |
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Alliance Semiconductor Corporation |
Low Power EMI Reduction IC FCC approved method of EMI attenuation. Generates a 1X low EMI spread spectrum clock of the input frequency. Input frequency range: 20MHz –34MHz. Internal loop filter minimizes external components and board space. Frequency deviation: -1.5% Low inher |
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Taiwan Semiconductor Company |
30V N-Channel MOSFET ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Block Diagram Part No. Package Packing TSM3424CX6 RF SOT-26 3Kpcs / 7” Reel TSM3424CX6 RFG S |
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