No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
MA-COM |
Zero Bias Schottky Diodes Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS20-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave 0-bias |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
P-Type Silicon Schottky Diodes Very Low 1/f Noise Detector Applications up to 40 GHz Chip Beam Lead and Packaged Devices Description The MSS39-xxx-x Series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave biasedd |
|
|
|
MA-COM |
Low Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Low Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Extra High Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|
|
|
MA-COM |
Medium Barrier Silicon Schottky Diodes VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using propri |
|