MSS30-148-H20 |
Part Number | MSS30-148-H20 |
Manufacturer | MA-COM |
Description | The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained w... |
Features |
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS30-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS30-046-C15 Single Junction VF Typ. V 0.29 MSS30-050-C15 Single Junction 0.27 Test Conditions IF = 1 mA VBR Min. V 2 CJ Ty... |
Document |
MSS30-148-H20 Data Sheet
PDF 666.71KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSS30-148-B10B |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
2 | MSS30-148-E25 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
3 | MSS30-142-B10B |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
4 | MSS30-142-E25 |
MA-COM |
Low Barrier Silicon Schottky Diodes | |
5 | MSS30-142-H20 |
MA-COM |
Low Barrier Silicon Schottky Diodes |