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MSS40-148-E25 |
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| Part Number | MSS40-148-E25 |
| Manufacturer | MA-COM |
| Description | The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained w... |
| Features |
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS40-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. Rev. V1 Chip Electrical Specifications: TA = 25°C Model Configuration MSS40-045-C15 Single Junction VF Typ. V 0.42 MSS40-048-C15 Single Junction 0.40 Test Conditions IF = 1 mA VBR Min. V 3 CJ Typ... |
| Document |
 MSS40-148-E25 Data Sheet
PDF 665.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MSS40-148-B10B |
MA-COM |
Medium Barrier Silicon Schottky Diodes |
|
| 2 | MSS40-148-H20 |
MA-COM |
Medium Barrier Silicon Schottky Diodes |
|
| 3 | MSS40-141-B10B |
MA-COM |
Medium Barrier Silicon Schottky Diodes |
|
| 4 | MSS40-141-E25 |
MA-COM |
Medium Barrier Silicon Schottky Diodes |
|
| 5 | MSS40-141-H20 |
MA-COM |
Medium Barrier Silicon Schottky Diodes |
|