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JinYu |
20V N-Channel MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23 REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter |
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JinYu |
20V N-Channel MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions SI2300 D SOT-23(PACKAGE) GS REF. A B C D E F Millimet |
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JinYu |
P-Channel MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2301 D SOT-23(PACKAGE) GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L |
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JinYu |
20V N-Channel MOSFET Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions SI2312 D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Mi |
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JinYu |
20V N-Channel Enhancement Mode MOSFET VDS (V) = 20 V ID = 2.8 A RDS(ON) = 60mΩ @ VGS = 4.5V RDS(ON) = 70mΩ @ VGS = 2.5V Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G SOT-23 S REF. Millimeter Millimeter REF. Mi |
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