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SI2312 |
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| Part Number | SI2312 |
| Manufacturer | JinYu |
| Description | 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), [email protected], [email protected] < 31mΩ RDS(ON), [email protected], [email protected] < 37mΩ RDS(ON), [email protected], [email protected] < 85mΩ Features Advanced trench process technology High... |
| Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2312
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation
TA = 25oC TA = 75oC
VDS VGS ID IDM
PD
20 +8 4.9 15 0... |
| Document |
 SI2312 Data Sheet
PDF 1.83MB |
| Distributor | Stock | Price | Buy |
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