SI2301 |
Part Number | SI2301 |
Manufacturer | JinYu |
Description | 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), [email protected], [email protected] RDS(ON), [email protected], [email protected] 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultr... |
Features |
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2301
D
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range Junction-t... |
Document |
SI2301 Data Sheet
PDF 3.58MB |
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