No. | Partie # | Fabricant | Description | Fiche Technique |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is |
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Intersil Corporation |
Radiation Hardened/ Ultra High Speed Current Feedback Amplifier • Electrically Screened to SMD # 5962-94676 • QML Qualified per MIL-PRF-38535 Requirements • Low Distortion (HD3, 30MHz). . . . . . . . . . . . -84dBc (Typ) • Wide -3dB Bandwidth. . . . . . . . . . . . . . . . . 850MHz (Typ) • Very High Slew Rate . . |
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Intersil Corporation |
Radiation Hardened Octal Three-State Transparent Latch |
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Intersil Corporation |
Dual/ 125MHz/ Video Current Feedback Amplifier wide bandwidth and high slew rate, and is optimized for video applications and gains between 1 and 10. It is a current feedback amplifier and thus yields less bandwidth degradation at high closed loop gains than voltage feedback amplifiers. The low dif |
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Intersil Corporation |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFET • 2A, 500V, rDS(ON) = 2.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Of |
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Intersil Corporation |
Window Comparator With Independent Adjustments the input signal to the trip voltage developed by RT. The window width voltage RW is summed into the output of the op amp as an offset voltage. The op amp has two feedback loops each of which contains a steering diode, D1 or D2. The high open loop g |
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Intersil Corporation |
monolithic dual n-channel JFET |
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Intersil Corporation |
20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers • High Slew Rate. . . . . . . . . . . . . . . . . . . . . . . . . . . 120V/µs • Fast Settling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200ns • Full Power Bandwidth . . . . . . . . . . . . . . . . . . . . . . . . 2MHz • Gain Bandw |
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Intersil Corporation |
DUAL N-CHANNEL JFET |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use |
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Intersil Corporation |
Radiation Hardened 8-Bit Universal Shift Register • • • • • • • • • • • • 3 Micron Radiation Hardened CMOS SOS Total Dose 200K RAD (Si) SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) Dose Rate Survivability: >1 x 1012 RAD (Si)/s Dose R |
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Intersil Corporation |
N-Channel Power MOSFET • 2.0A, 250V • rDS(ON) = 2.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surfa |
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Intersil Corporation |
N-Channel Power MOSFET • 20A, 500V • rDS(ON) = 0.270Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surf |
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Intersil Corporation |
Dual/ 400kHz/ Ultra-Low Power Operational Amplifier • Low Supply Current . . . . . . . . . . . . . . . . . . . . . 45µA/Amp • Wide Supply Voltage Range Single . . . . . . . . . 3V to 30V - or Dual . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±1.5V to ±15V • High Slew Rate. . . . . . . . |
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Intersil Corporation |
DUAL N-CHANNEL JFET |
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Intersil Corporation |
monolithic dual n-channel JFET |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ide |
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Intersil Corporation |
N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is |
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Intersil Corporation |
N-Channel Power MOSFET • 30A, 50V • rDS(ON) = 0.040Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mount Com |
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Intersil |
Single Event Radiation Hardened High Speed Current Mode PWM • Electrically Screened to DSCC SMD # 5962-01509 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - High Dose Rate. . . . . . . . . . . . . . . . . . . . .300 krad(SI) (Max) - Low Dose Rate . . . . . . . . . . . . . . . . . . . |
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