IRF614 |
Part Number | IRF614 |
Manufacturer | Intersil Corporation |
Description | This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdow... |
Features |
• 2.0A, 250V • rDS(ON) = 2.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF614 PACKAGE TO-220AB BRAND IRF614 G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.inters... |
Document |
IRF614 Data Sheet
PDF 45.10KB |
Distributor | Stock | Price | Buy |
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