HGTP3N60A4 |
Part Number | HGTP3N60A4 |
Manufacturer | Intersil Corporation |
Description | HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 Data Sheet January 2000 File Number 4825 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S, HGT1S3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching d... |
Features |
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49327.
Features
• >100kHz Operation at 390V, 3A • 200kHz Operation at 390V, 2.5A • 600V Switching SOA Capability • T... |
Document |
HGTP3N60A4 Data Sheet
PDF 156.22KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
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1 | HGTP3N60A4 |
Fairchild Semiconductor |
N-Channel IGBT | |
2 | HGTP3N60A4D |
Fairchild Semiconductor |
N-Channel IGBT | |
3 | HGTP3N60A4D |
Intersil Corporation |
N-Channel IGBT | |
4 | HGTP3N60B3 |
Intersil Corporation |
N-Channel IGBT | |
5 | HGTP3N60B3D |
Intersil Corporation |
N-Channel IGBT |