| No. | Partie # | Fabricant | Description | Fiche Technique |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 64A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown an |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 64A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown an |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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|
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs • 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V |
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Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs s Undershoot hardened to −2V (A and B Ports) s Slower output enable times to prevent signal disruption s 4Ω switch connection between two ports s Minimal propagation delay through the switch s Low lCC s Zero bounce in flow-through mode s Control inpu |
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