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FSTYC9055D |
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| Part Number | FSTYC9055D |
| Manufacturer | Intersil Corporation |
| Description | FSTYC9055D, FSTYC9055R TM Data Sheet June 2000 File Number 4755.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of ... |
| Features |
• 64A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Typical SEE Immunity - LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 0V - LET of 26MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 6nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCR... |
| Document |
 FSTYC9055D Data Sheet
PDF 74.87KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSTYC9055R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|
| 2 | FST100100 |
TRANSYS |
SCHOTTKY DIODE |
|
| 3 | FST100100 |
DACO |
SCHOTTKY DIODE MODULE |
|
| 4 | FST100100 |
GeneSiC |
Silicon Power Schottky Diode |
|
| 5 | FST10020 |
GeneSiC |
Silicon Power Schottky Diode |
|