Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
FSTJ9055D |
Click to view a larger image
| Part Number | FSTJ9055D |
| Manufacturer | Intersil Corporation |
| Description | FSTJ9055D, FSTJ9055R TM Data Sheet June 2000 File Number 4756.1 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Ra... |
| Features |
• 62A, -60V, rDS(ON) = 0.023Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM • Photo Current - 6nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Symbol D G S Packaging TO-254AA Ordering Information RAD LEVEL 10K 10K 100K 100K 1... |
| Document |
 FSTJ9055D Data Sheet
PDF 72.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FSTJ9055D1 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|
| 2 | FSTJ9055D3 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|
| 3 | FSTJ9055R |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|
| 4 | FSTJ9055R1 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|
| 5 | FSTJ9055R3 |
Intersil Corporation |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs |
|