No. | Partie # | Fabricant | Description | Fiche Technique |
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International Rectifier |
IRF630NS nt power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its l |
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International Rectifier |
Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio |
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International Rectifier |
Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio |
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International Rectifier |
Power MOSFET ble of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connectio |
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International Rectifier |
(IRHLF6x0Z4) POWER MOSFET n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLF6970Z4 Absol |
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International Rectifier |
Power MOSFET n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, |
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International Rectifier |
POWER MOSFET 3) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 10.54 (.415) 10.29 (.405) 4 3.78 (.149) 3.54 (.139) -A- 6.47 (.255) 6.10 (.240) 1 23 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) 4.69 (.185) 4.20 (.165) -B- 1.32 (.052) 1.22 (.048) |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
Power MOSFET the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
Power MOSFET |
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International Rectifier |
Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
Power MOSFET d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The t |
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International Rectifier |
HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic |
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International Rectifier |
HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic |
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International Rectifier |
HEXFET Power MOSFET pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount applic |
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