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IRF630NSPBF |
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| Part Number | IRF630NSPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast... |
| Features |
d the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF630NL) is available for lowprofile application.
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
www.irf.com
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Sourc... |
| Document |
 IRF630NSPBF Data Sheet
PDF 335.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF630NS |
International Rectifier |
Power MOSFET |
|
| 2 | IRF630NS |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF630NSTRRPBF |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRF630N |
International Rectifier |
Power MOSFET |
|
| 5 | IRF630N |
INCHANGE |
N-Channel MOSFET |
|