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IRF634NSPbF |
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| Part Number | IRF634NSPbF |
| Manufacturer | International Rectifier |
| Description | l l Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ... |
| Features |
pability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application.
IRF634NPbF IRF634NSPbF IRF634NLPbF
HEXFET® Power MOSFET
D
VDSS = 250V RDS(on) = 0.435Ω
G S
ID = 8.0A
www.DataSheet4U.com
TO-220AB IRF634N
D2Pak IRF634NS
TO-262 IRF634NL
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @... |
| Document |
 IRF634NSPbF Data Sheet
PDF 248.75KB |
| Distributor | Stock | Price | Buy |
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