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International Rectifier |
HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Sepa |
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International Rectifier |
HIGH AND LOW SIDE DRIVER n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 |
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International Rectifier |
HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation • • • • • • • • Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage lockout for both channels 3.3V logic compa |
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International Rectifier |
HEXFET Power MOSFET m Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage f Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 scr |
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International Rectifier |
HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Sepa |
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International Rectifier |
HIGH AND LOW SIDE DRIVER HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Product Summary • Fully operational to +500 V or +600 V • Tolerant to negative transient voltage, dV/dt immune • Gate drive supply range from 10 V to 20 V VOFFSET (IRS21 |
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International Rectifier |
HIGH AND LOW SIDE DRIVER Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic su |
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International Rectifier |
(IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operation |
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International Rectifier |
HIGH AND LOW SIDE DRIVER • Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Sepa |
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International Rectifier |
(IRF1104S/LPBF) HEXFET Power MOSFET e on-resistance in any existing surface mount package. The DataSheet4U.com D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The thro |
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International Rectifier |
HIGH AND LOW SIDE DRIVER n Floating channel designed for bootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 |
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International Rectifier |
110A RMS SCR |
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International Rectifier |
POWER RECTIFIER DIODES Electrically isolated base plate Types up to 1200 VRRM 3500 VRMS isolating voltage Simplified mechanical designs, rapid assembly High surge capability Large creepage distances UL E78996 approved RoHS Compliant Description These series of T-modules u |
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International Rectifier |
(IR2110C / IR2113C) High and Low Side Driver in Die Wafer Form • 100 % Tested at Probec • 3.3V logic compatible • Available in Chip Pack, Unsawn Wafer, Sawn on Film d Separate logic supply range from 3.3V to 20V • Floating channel designed for bootstrap operation Logic and power ground ±5V offset Fully operation |
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International Rectifier |
HEXFET Power MOSFET meter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single |
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International Rectifier |
Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the la |
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International Rectifier |
HEXFET Power MOSFET e of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRL1104L) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ T |
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International Rectifier |
(MBRS1100TRPbF / MBRS190TRPbF) SCHOTTKY RECTIFIER Units A V A V °C The MBRS190TRPbF, MBRS1100TRPbF surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies |
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International Rectifier |
Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET® Power MOSFET D G S VDSS RDS(on) typ. ma |
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International Rectifier |
POWER MOSFET gh-hole version (IRL1104L) is available for lowprofile applications. Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Dr |
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