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IRLR3110ZPBF |
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| Part Number | IRLR3110ZPBF |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
Description Specifically designed for Industrial applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Industrial applications an... |
| Document |
 IRLR3110ZPBF Data Sheet
PDF 314.32KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRLR3110Z |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRLR3114Z |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRLR3114ZPbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRLR3103 |
International Rectifier |
Power MOSFET |
|
| 5 | IRLR3103 |
INCHANGE |
N-Channel MOSFET |
|