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AUIRLU3110Z |
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| Part Number | AUIRLU3110Z |
| Manufacturer | International Rectifier |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
HEXFET® Power MOSFET
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G S
VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
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100V 11mΩ 14mΩ 63A 42A
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Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast swi... |
| Document |
 AUIRLU3110Z Data Sheet
PDF 285.25KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | AUIRLU3114Z |
Infineon |
Power MOSFET |
|
| 2 | AUIRLU3114Z |
International Rectifier |
Power MOSFET |
|
| 3 | AUIRLU024N |
Infineon |
Power MOSFET |
|
| 4 | AUIRLU024N |
International Rectifier |
Power MOSFET |
|
| 5 | AUIRLU024Z |
Infineon |
Power MOSFET |
|