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Infineon Technologies |
IPD20N03L •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) www.DataSheet4U.com •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating tem |
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Infineon Technologies |
Power Transistor EC for Industrial Applications 4YYURLJ\RXW[ .$!KL9?=K @9J<KOAL;@AF?.5+KL9?=K9F<J=KGF9FLKOAL;@AF?.5+KL9?=K >GJ= ? .!1ADN=J:GP <9HL=J *!".".24 *A?@LAF? 1=JN=J 2=D=;GE and OJM. MZJRW =6; PJ\N =6; [X]ZLN =6; " # |
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Infineon Technologies |
Power Transistor |
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Infineon Technologies |
MOSFET XRPbX^]a PRR^`SX]V b^ A<;<9 "A&IJ;+) P]S A |
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Infineon Technologies AG |
MOSFET • N-Channel Product Summary VDS RDS(on) ID 30 4.2 100 P-TO252-5-1 V mΩ A • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/ |
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Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID 30 5.9 50 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche rated •dv/dt ra |
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Infineon Technologies AG |
OptiMOS 2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target application • N-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • 175 °C oper |
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Infineon Technologies AG |
OptiMOS Buck converter series •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 10.4 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance •175°C operating temperature •Avalanche |
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Infineon Technologies |
IPD14N03L • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On-Resistance RDS(on) www.DataSheet4U.com • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature |
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Infineon Technologies |
MOSFET fj\gV[\aZ JPG fgTZXf TaW eXfbaTag fj\gV[\aZ JPG fgTZXf Ybe X(Z( J= L\_iXeUbk& ;WTcgXe& F=> " J>J MO& F\Z[g\aZ& LXeiXe& MX_XVb` and NJL( =C7-'D-''6-# =C5-'D-''6=CC-'D-''6-# =C4-'D-''6- AL>EI ZSX ) D>NB ZSX ( MJOL@B ZSX * J_XTfX abgX4 @be GIL@?M |
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Infineon Technologies |
MOSFET •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalanc |
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Infineon Technologies |
MOSFET •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel,logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Avalanc |
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Infineon Technologies |
OptiMOS Power-Transistor • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according |
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Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead p |
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Infineon Technologies |
OptiMOS2 Power-Transistor • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead p |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD25N06S2-40 Product Summary V DS R DS(on),max (SMD |
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Infineon Technologies |
Power-Transistor • P-channel - Normal Level - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70P04P4-09 Product Summary V DS R DS(on) ID -40 V 8.9 mΩ -73 A |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 |
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Infineon Technologies |
Power-Transistor • single P-Channel in DPAK • Qualified according JEDEC1) for target applications • 175 °C operating temperature • 100% Avalanche tested • Pb-free; RoHS compliant, halogen free • applications: power management • Halogen-free according to IEC61249-2-21 |
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Infineon Technologies |
Power-Transistor • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) |
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