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IPD35N10S3L-26 |
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| Part Number | IPD35N10S3L-26 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche teste... |
| Features |
• N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD35N10S3L-26 Product Summary VDS RDS(on),max ID 100 V 24 mW 35 A PG-TO252-3-11 Type Package Marking IPD35N10S3L-26 PG-TO252-3-11 3N10L26 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=17A Avalanche current, single puls... |
| Document |
 IPD35N10S3L-26 Data Sheet
PDF 319.66KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD350N06L |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD350N06L |
Infineon |
Power-Transistor |
|
| 3 | IPD350N06LG |
Infineon |
Power-Transistor |
|
| 4 | IPD35CN10NG |
Infineon |
Power-Transistor |
|
| 5 | IPD30N03S2L |
INCHANGE |
N-Channel MOSFET |
|